ZXT10P12DE6 |
RFQ for ZXT10P12DE6 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| ZXT10P12DE6 | - | SOT23-6 | 06+ |
This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.
Typical Application |
Features |
| • DC - DC Converters• Power Management Functions• Power switches• Motor control | • Low Equivalent On Resistance• Extremely Low Saturation Voltage• hFE characterised up to 10A• IC=3A Continuous Collector Current• SOT23-6 package |
| PARAMETER | SYMBOL |
LIMIT |
UNIT |
| Collector-base voltage | VCBO |
-12 |
V |
| Collector-emitter voltage | VCEO |
-12 |
V |
| Emitter-base voltage | VEBO |
-5 |
V |
| Peak Pulse Current | ICM |
-10 |
A |
| Continuous Collector Current | IC |
-3 |
A |
| Base Current | IB |
-500 |
mA |
| Power Dissipation at TA=25°C(a) Linear Derating Factor |
PD |
1.1 8.8 |
W mW/ |
| Power Dissipation at TA=25°C(b) Linear Derating Factor |
PD |
1.7 13.6 |
W mW/ |
| Operating and Storage Temperature Range | Tj:Tstg |
-55 to +150 |
